DOD - SMD 5962-08202
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 27 July 2018 |
| Status: | active |
| Page Count: | 26 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
SMD 5962-08202
July 27, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
March 12, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
June 12, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
July 17, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 12, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 8, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 2M x 8-BIT, RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...