scope:

Purpose.

Part 3 of this test method standard establishes uniform test methods for the electrical testing of semiconductor transistors to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, rectifiers, thryristors, and other related electronic components. This part of a multipart test method standard is intended to apply only to semiconductor devices.

Numbering system.

The test methods are designated by numbers assigned in accordance with the following system:

Classification of tests.

The electrical test methods included in this part of a mulitpart test method standard are divided into six classes: Test methods numbered 3001 to 3092 cover electrical characteristics tests for bipolar transistors; those numbered 3100 to 3181 cover tests for circuit-performance and thermal resistance measurements; those numbered 3201 to 3266 cover low frequency tests ; those numbered 3301 to 3320 covers high frequency tests, those numbered 3401 to 3490 cover tests for MOS field-effect transistors; and those numbered 3501 to 3575 cover tests for Gallium Arsenide transistors.

Test method revisions.

Revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, 3011.2 designates the second revision of test method 3011.

Method of reference.

When applicable, test methods contained herein should be referenced in the individual specification, specification sheet, or procurement document by specifying the test method number and the details specified in the summary section of the applicable test method. To avoid the necessity for changing documents that refer to test methods of this standard, the revision number of a test method should not be used when referencing individual test methods. For example, use 3011 as a reference versus 3011.2.

intended Use: