DOD - SMD 5962-18214
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION HARDENED, 8M X 18-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
active, Most Current
Buy Now
| Organization: | DOD |
| Publication Date: | 31 December 2019 |
| Status: | active |
| Page Count: | 31 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
SMD 5962-18214
December 31, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION HARDENED, 8M X 18-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...