DLA - DSCC-DWG-V62/17615 REV A
MICROCIRCUIT, LINEAR, 0.01 GHz to 10 GHz, MMIC, GaAs, pHMET RF GAIN BLOCK, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 6 March 2020 |
| Status: | active |
| Page Count: | 11 |
scope:
Scope.
This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) radio frequency (RF) gain block microcircuit, with an operating temperature range of -55ºC to +105ºC.
Document History
DSCC-DWG-V62/17615 REV A
March 6, 2020
MICROCIRCUIT, LINEAR, 0.01 GHz to 10 GHz, MMIC, GaAs, pHMET RF GAIN BLOCK, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron...
November 16, 2017
MICROCIRCUIT, LINEAR, 0.01 GHz to 10 GHz, MMIC, GaAs, pHMET RF GAIN BLOCK, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron mobility...