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NEN-IEC 60747-9

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

active, Most Current
Organization: NEN
Publication Date: 1 November 2019
Status: active
Page Count: 168
ICS Code (Transistors): 31.080.30
ICS Code (Semiconductor devices in general): 31.080.01
scope:

This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

Document History

NEN-IEC 60747-9
November 1, 2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for...
October 1, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate...
September 1, 2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
February 1, 1999
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulted-gate bipolar transistors (IGBTs).

References

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