NPFC - MIL-PRF-19500/753
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 18 September 2020 |
| Status: | active |
| Page Count: | 24 |
scope:
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to three radiation levels ("R", "F", and "G") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/753
September 18, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
March 2, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 17, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 20, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 5, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...