DLA - DSCC-VID-V62/04656 REV C
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 20 October 2020 |
| Status: | active |
| Page Count: | 11 |
scope:
Scope.
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C for device 01 and an operating temperature range of -55°C to +125°C for device 02.
Document History
DSCC-VID-V62/04656 REV C
October 20, 2020
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C for...
July 23, 2012
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C for device 01...
December 15, 2006
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -40°C to +85°C for device 01...
February 24, 2004
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.