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NPFC - MIL-PRF-19500/655

TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS

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Organization: NPFC
Publication Date: 25 February 2021
Status: active
Page Count: 26
scope:

Scope.

This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided.

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

 

Document History

MIL-PRF-19500/655
February 25, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS
Scope. This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are...
September 18, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
January 17, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
February 14, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
October 31, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
September 26, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
A description is not available for this item.
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
A description is not available for this item.
January 9, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
April 21, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
November 14, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...

References

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