DLA - MIL-PRF-19500/516H (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED, TYPES 1N6102 THROUGH 1N6173, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
active, Most Current
| Organization: | DLA |
| Publication Date: | 14 April 2023 |
| Status: | active |
| Page Count: | 31 |
scope:
Scope.
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes with voltage tolerances of either 10 or 5 percent. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/516H (1)
April 14, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED, TYPES 1N6102 THROUGH 1N6173, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes with voltage tolerances of either 10 or 5...
February 22, 2018
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, ENCAPSULATED (AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N6102 THROUGH 1N6173, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV,...
March 22, 2016
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, ENCAPSULATED (AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N6102 THROUGH 1N6173, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV,...
September 12, 2013
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, 1N6102URS THROUGH 1N6137URS, 1N6102AURS THROUGH 1N6137AURS, 1N6138URS THROUGH 1N6173URS, 1N6138AURS THROUGH 1N6173AURS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each...
June 7, 2011
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, 1N6102URS THROUGH 1N6137URS, 1N6102AURS THROUGH 1N6137AURS, 1N6138URS THROUGH 1N6173URS, 1N6138AURS THROUGH 1N6173AURS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each...
June 5, 2009
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each...
March 28, 2005
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
A description is not available for this item.
April 14, 2000
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
November 29, 1999
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
A description is not available for this item.
July 23, 1999
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device...
January 20, 1995
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1156102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1156138 THROUGH 1136173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N613NS, lN6102AUS THRWGH 1N6137AUS, 1N6138üS THROUGH 1N6173US, lN6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification covers the detail requirements for 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type...
October 18, 1993
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH IN6137US, lN6102AUS THROUGH IN6137AUS, 1N6138US THROUGH 1N6173US, AND 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 6, 1992
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH IN6137US, lN6102AUS THROUGH IN6137AUS, 1N6138US THROUGH 1N6173US, AND 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
January 8, 1990
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, AND 1N6138A THROUGH 1N6173A, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 26, 1989
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, AND 1N6138A THROUGH 1N6173A, JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 500 watt and 1500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device as...
July 10, 1985
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, AND 1N6138A THROUGH 1N6173A, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
October 4, 1983
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, AND 1N6138A THROUGH 1N6173A, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 27, 1983
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, AND 1N6138A THROUGH 1N6173A, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 30, 1981
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLARITY TRANSIENT VOLTAGE SUPPRESSOR, TYPE IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, JANS
A description is not available for this item.
January 7, 1981
SEMICONDUCTOR DEVICE, DIODE SILICON, BI-POLARITY, TRANSIENT VOLTAGE SUPPRESSOR, NON-TX, TX, TXV TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A AND IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A
A description is not available for this item.
September 24, 1980
SEMICONDUCTOR DEVICE, DIODE SILICON, BI-POLARITY TRANSIENT VOLTAGE SUPPRESSOR, NON-TX, TX, TXV TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A AND IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A
A description is not available for this item.
January 16, 1979
SEMICONDUCTOR DEVICE, DIODE SILICON, BI-POLARITY TRANSIENT VOLTAGE SUPPRESSOR, NON-TX, TX, TXV TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A AND IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A
A description is not available for this item.
March 17, 1978
SEMICONDUCTOR DEVICE, DIODE SILICON, BI-POLARITY TRANSIENT VOLTAGE SUPPRESSOR, NON-TX, TX, TXV TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A AND IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A
A description is not available for this item.
February 23, 1976
SEMICONDUCTOR DEVICE, DIODE SILICON, BI-POLARITY TRANSIENT VOLTAGE SUPPRESSOR, NON-TX, TX, TXV TYPES IN6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A AND IN6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A
A description is not available for this item.