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DLA - DSCC-VID-V62/22615

MICROCIRCUIT, LINEAR, RADIATION-TOLERANT 3-A DDR TERMINATION REGULATOR, MONOLITHIC SILICON

active, Most Current
Organization: DLA
Publication Date: 23 May 2023
Status: active
Page Count: 14
scope:

Scope.

This drawing documents the general requirements of a radiation-tolerant 3-A double data rate (DDR) termination regulator microcircuit, with an operating temperature range of -55°C to +125°C.

Document History

DSCC-VID-V62/22615
May 23, 2023
MICROCIRCUIT, LINEAR, RADIATION-TOLERANT 3-A DDR TERMINATION REGULATOR, MONOLITHIC SILICON
Scope. This drawing documents the general requirements of a radiation-tolerant 3-A double data rate (DDR) termination regulator microcircuit, with an operating temperature range of -55°C to +125°C.

References

This document references:
ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
Published by ASTM on October 1, 2011
This guide defines the requirements and procedures for testing integrated circuits and other devices for the effects of single event phenomena (SEP) induced by irradiation with heavy ions having an...
This document references:
JEDEC JEP 155 - Recommended ESD Target Level for HBM Qualification
Published by JEDEC on July 1, 2018
The intent of this report is to document and provide critical information to assess and make decisions on safe ESD level requirements. The scope of this document is to provide this information to...
This document references:
JEP157A - Recommended ESD-CDM Target Levels
Published by JEDEC on April 1, 2022
The intent of this report is to document and provide critical information to assess and make decisions on safe CDM ESD level requirements. The scope of this document is to provide this information to...
This document references:
JEDEC JESD 57 - Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation
Published by JEDEC on December 1, 1996
This test method defines requirements and procedures for ground simulation and single event effects (SEE) and implementation of the method in testing integrated circuits. This standard is valid when...
This document references:
JS-001 - Electrostatic Discharge Sensitivity Testing Human Body Model (HBM) - Device Level
Published by JEDEC on May 1, 2023
This standard establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a...
This document references:
JS-002 - Electrostatic Discharge Sensitivity Testing Charged Device Model (CDM) Device Level
Published by JEDEC on January 1, 2022
This document establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a...
This document references:
MIL-STD-883 - TEST METHOD STANDARD MICROCIRCUITS
Published by NPFC on September 16, 2019
Purpose. This standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic...
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