DLA - MIL-PRF-19500/598C (4)
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 27 November 2023 |
| Status: | active |
| Page Count: | 19 |
scope:
Scope.
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/598C (4)
November 27, 2023
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum...
October 18, 2018
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
February 26, 2015
TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
May 8, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
January 28, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum avalanche...
July 14, 2011
Semiconductor Device, Quad, Field Effect Transistor, P-Channel, and N-Channel, Silicon Type 2N7336, JAN, JANTX, JANTXV, and JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type...
November 5, 2003
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type...
June 26, 2001
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 8, 1998
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
November 24, 1997
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor. Four levels of product assurance are provided for each device...
December 16, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
January 27, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
January 8, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
July 29, 1992
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
A description is not available for this item.
December 11, 1991
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for quad N-channel and P-channel, enhancementmode, MOSFET, power transistor intended for use in high density power switching applications. Three...