DOD - SMD 5962-89863
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 20 April 2015 |
| Status: | active |
| Page Count: | 22 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
September 7, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
Scope.
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
SMD 5962-89863
April 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 8, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 17, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....