NPFC - MIL-PRF-19500/732
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
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| Organization: | NPFC |
| Publication Date: | 26 August 2016 |
| Status: | active |
| Page Count: | 26 |
scope:
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
July 9, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
MIL-PRF-19500/732
August 26, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
October 8, 2014
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
April 18, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 23, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 9, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 14, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3 AND T3, 2N7520U3 AND T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...