DLA - MIL-PRF-19500/732
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3 AND T3, 2N7520U3 AND T3, JANTXVR, F AND JANSR, F
inactive
| Organization: | DLA |
| Publication Date: | 14 November 2005 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
July 9, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
August 26, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
October 8, 2014
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
April 18, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 23, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 9, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/732
November 14, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3 AND T3, 2N7520U3 AND T3, JANTXVR, F AND JANSR, F
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...