DOD - SMD 5962-02530
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 3M GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 25 April 2007 |
| Status: | inactive |
| Page Count: | 39 |
scope:
This drawing documents two product assurance class levels consisting high reliability (device classes Q and M) and space application (device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
October 29, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 3M GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-02530
April 25, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYSTEM REPROGRAMMABLE), 3M GATES, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting high reliability (device classes Q and M) and space application (device class V. A choice of case outlines and lead finishes are...