DOD - SMD 5962-07237
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 1 December 2016 |
| Status: | active |
| Page Count: | 22 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
Document History
December 15, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-07237
December 1, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
March 10, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 12, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1M x 4-BIT (4M), STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...