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IEC 60747-4

Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors

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Organization: IEC
Publication Date: 1 January 2017
Status: active
Page Count: 554
ICS Code (Transistors): 31.080.30
ICS Code (Diodes): 31.080.10
scope:

This part of IEC 60747 gives requirements for the following categories of discrete devices

variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification)

mixer diodes and detector diodes

avalanche diodes (for direct harmonic generation, amplification)

gunn diodes (for direct harmonic generation)

bipolar transistors (for amplification, oscillation)

field-effect transistors (for amplification, oscillation)

Document History

IEC 60747-4
January 1, 2017
Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors
This part of IEC 60747 gives requirements for the following categories of discrete devices variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication,...
January 1, 2017
AMENDMENT 1 Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors
A description is not available for this item.
August 1, 2007
Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors
This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication,...
September 1, 2001
Semiconductor Devices - Discrete Devices Part 4: Microwave Devices
A description is not available for this item.
April 1, 1991
Semiconductor Devices - Discrete Devices Part 4: Microwave Devices
A description is not available for this item.

References

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