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IEC 60747-4

Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors

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Organization: IEC
Publication Date: 1 August 2007
Status: inactive
Page Count: 280
ICS Code (Transistors): 31.080.30
ICS Code (Diodes): 31.080.10
scope:

This part of IEC 60747 gives requirements for the following categories of discrete devices:

- variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification);

- mixer diodes and detector diodes;

- avalanche diodes (for direct harmonic generation, amplification);

- gunn diodes (for direct harmonic generation);

- bipolar transistors (for amplification, oscillation); - field-effect transistors (for amplification, oscillation).

Document History

IEC 60747-4
January 1, 2017
Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors
This part of IEC 60747 gives requirements for the following categories of discrete devices variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication,...
IEC 60747-4
January 1, 2017
AMENDMENT 1 Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors
A description is not available for this item.
IEC 60747-4
August 1, 2007
Semiconductor devices – Discrete devices – Part 4: Microwave diodes and transistors
This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication,...
IEC 60747-4
September 1, 2001
Semiconductor Devices - Discrete Devices Part 4: Microwave Devices
A description is not available for this item.
60747-4
April 1, 1991
Semiconductor Devices - Discrete Devices Part 4: Microwave Devices
A description is not available for this item.

References

This document references:
IEC 60747-16-1 - Semiconductor devices – Part 16-1: Microwave integrated circuits – Amplifiers
Published by IEC on February 1, 2017
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as well as the measuring methods for integrated circuit microwave power amplifiers.
This document references:
IEC 60747-7 - Semiconductor devices – Discrete devices – Part 7: Bipolar transistors
Published by IEC on September 1, 2019
This part of IEC 60747-7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. – Small signal transistors (excluding switching and...
This document references:
IEC 60050-702 - International Electrotechnical Vocabulary Chapter 702: Oscillations, Signals and Related Devices
Published by IEC on March 1, 1992
FOREWORD 1) The formal decisions or agreements of the IEC on technical matters, prepared by Technical Committees on which all the National Committees having a special interest therein are...
This document references:
IEC 60747-1 - Semiconductor devices – Part 1: General
Published by IEC on August 1, 2010
This part of IEC 60747 gives the general requirements applicable to the discrete semiconductor devices and integrated circuits covered by the other parts of IEC 60747 and IEC 60748 (see Annex A).
This document references:
IEC 60747-16-1 - Semiconductor devices – Part 16-1: Microwave integrated circuits – Amplifiers
Published by IEC on February 1, 2017
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as well as the measuring methods for integrated circuit microwave power amplifiers.
This document references:
IEC 60747-7 - Semiconductor devices – Discrete devices – Part 7: Bipolar transistors
Published by IEC on September 1, 2019
This part of IEC 60747-7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. – Small signal transistors (excluding switching and...
This document references:
60747-8 - Semiconductor devices – Discrete devices – Part 8: Field-effect transistors
Published by IEC on June 1, 2021
This part of IEC 60747 gives standards for the following categories of field-effect transistors: – type A: junction-gate type; – type B: insulated-gate depletion (normally on) type; – type C:...
This document is referenced by:
IEC 61360-1 - Standard data element types with associated classification scheme – Part 1: Definitions – Principles and methods
Published by IEC on July 1, 2017
This part of IEC 61360 specifies principles for the definition of the properties and associated attributes and explains the methods for representing verbally defined concepts with appropriate data...
This document is referenced by:
BS EN 60749-23 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
Published by BSI on June 24, 2004
A description is not available for this item.
This document is referenced by:
BS IEC 60747-7 - Semiconductor devices – Discrete devices Part 7: Bipolar transistors
Published by BSI on February 28, 2011
A description is not available for this item.
This document is referenced by:
CEI EN 60749-34 - Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling
Published by CEI on February 1, 2012
Scope and object This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of...
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