NPFC - MIL-PRF-19500/746
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 30 May 2017 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device . Two levels of product assurance (JANHC and JANKC) are provided for the 2N7587 (unencapsulated) device.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
April 24, 2023
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
June 17, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
December 9, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
January 8, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
March 8, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 19, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589,2N7591, AND 2N7593,QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/746
May 30, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 17, 2014
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV and JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
June 24, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 15, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...