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NPFC - MIL-PRF-19500/746

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF

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Organization: NPFC
Publication Date: 15 May 2008
Status: inactive
Page Count: 22
scope:

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

April 24, 2023
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
June 17, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
December 9, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
January 8, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
March 8, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 19, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589,2N7591, AND 2N7593,QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 30, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 17, 2014
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV and JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
June 24, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/746
May 15, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...

References

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