DLA - MIL-PRF-19500/746D (2)
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
active, Most Current
| Organization: | DLA |
| Publication Date: | 24 April 2023 |
| Status: | active |
| Page Count: | 30 |
scope:
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device. Three levels (R, F and G) of radiation hardness assurance (RHA) are provided for product assurance levels JANTXV, JANS, JANHC, and JANKC.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/746D (2)
April 24, 2023
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
June 17, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
December 9, 2021
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
January 8, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
March 8, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 19, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589,2N7591, AND 2N7593,QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 30, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
November 17, 2014
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV and JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
June 24, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
March 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 15, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...