NPFC - MIL-PRF-19500/542
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
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| Organization: | NPFC |
| Publication Date: | 23 October 2017 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment
Document History
March 4, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
MIL-PRF-19500/542
October 23, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for...
September 13, 2013
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 22, 2011
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
April 26, 2010
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 8, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
June 27, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 22, 1998
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
April 20, 1998
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
August 17, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistors intended for use in high density power switching applications. Three levels of product...
June 30, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistors intended for use in high density power switching applications. Four levels of product...
May 27, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, AND 2N6762 JANTX, JANTXV, AND JANS
A description is not available for this item.
October 1, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 1, 1982
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JAN, JANTX, JANTXV
A description is not available for this item.
June 15, 1981
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758 2N6760 AND 2N6762 JAN, JANTX AND JANTXV
A description is not available for this item.
September 30, 1980
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JAN, JANTX AND JANTXV
A description is not available for this item.
July 22, 1980
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JAN, JANTX AND JANTXV
A description is not available for this item.