NPFC - MIL-S-19500-542
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, JANS, AND JANC
| Organization: | NPFC |
| Publication Date: | 30 June 1992 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistors intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. See 6.4 for JAN level.
See figure 1 (TO-204AA; formerly TO-3) and see figures 2, 3, and (see 6.5) for JANC die dimensions.
TA= +25°C, unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, TC= +25°C.
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