NPFC - MIL-PRF-19500/542
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 22 September 2011 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
March 4, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
October 23, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for...
September 13, 2013
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
MIL-PRF-19500/542
September 22, 2011
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
April 26, 2010
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 8, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
June 27, 2003
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
September 22, 1998
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
April 20, 1998
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
August 17, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistors intended for use in high density power switching applications. Three levels of product...
June 30, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistors intended for use in high density power switching applications. Four levels of product...
May 27, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, AND 2N6762 JANTX, JANTXV, AND JANS
A description is not available for this item.
October 1, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 1, 1982
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JAN, JANTX, JANTXV
A description is not available for this item.
June 15, 1981
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758 2N6760 AND 2N6762 JAN, JANTX AND JANTXV
A description is not available for this item.
September 30, 1980
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JAN, JANTX AND JANTXV
A description is not available for this item.
July 22, 1980
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6756, 2N6758, 2N6760 AND 2N6762 JAN, JANTX AND JANTXV
A description is not available for this item.