NPFC - MIL-PRF-19500/557
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 29 November 2017 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance are provided for each unencapsulated device.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
March 18, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels...
MIL-PRF-19500/557
November 29, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
March 21, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
August 7, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
July 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
June 24, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
November 24, 2008
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, and 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
August 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 1, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
January 29, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
December 9, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
December 9, 1994
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four Levels of product...
January 11, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796,2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the detail requirements for a N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
March 24, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 20, 1990
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
May 31, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
January 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
July 1, 1983
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800 AND 2N6802 JAN, JANTX AND JANTXV
A description is not available for this item.