NPFC - MIL-PRF-19500/557
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 9 December 1997 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each encapsulated device type.
See figure 1, TO-205AF (formerly TO-39), figure 3 (LCC), and figure 4 for JANHC and JANKC die dimensions.
Unless otherwise specified, TA = +25° C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
March 18, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels...
November 29, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of...
March 21, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
August 7, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
July 19, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
June 24, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
November 24, 2008
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, and 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
August 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 1, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
January 29, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
MIL-PRF-19500/557
December 9, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of...
December 9, 1994
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four Levels of product...
January 11, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796,2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the detail requirements for a N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
March 24, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 20, 1990
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
May 31, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
January 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JANTX, JANTXV, AND JANS
A description is not available for this item.
July 1, 1983
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6798, 2N6800 AND 2N6802 JAN, JANTX AND JANTXV
A description is not available for this item.