NPFC - MIL-M-38510/207
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
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| Organization: | NPFC |
| Publication Date: | 5 October 2007 |
| Status: | active |
| Page Count: | 36 |
scope:
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead material and finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
intended Use:
Microcircuits conforming to this specification are intended for logistic support of existing equipment.
Document History
May 20, 2022
Microcircuit, Digital, 256-Bit, Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
A description is not available for this item.
July 31, 2012
Microcircuit, Digital, 256-Bit, Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
A description is not available for this item.
MIL-M-38510/207
October 5, 2007
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped...
February 16, 2007
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible...
November 1, 2005
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible...
April 24, 2001
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
October 28, 1988
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
May 16, 1986
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or...
May 25, 1984
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
January 18, 1980
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
February 14, 1979
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
December 13, 1978
MICROCIRCUIT, DIGITAL, 256-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.