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DOD - SMD 5962-11235

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), 3.3 V, RADIATION-HARDENED, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 2 April 2018
Status: active
Page Count: 24
scope:

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-11235
April 2, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), 3.3 V, RADIATION-HARDENED, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 25, 2013
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), 3.3 V, RADIATION-HARDENED, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...

References

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