NPFC - MIL-PRF-19500/676
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7465 AND 2N7466, JANTXVR AND JANSR
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 7 June 2018 |
| Status: | active |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to one radiation level "R" is provided for JANS and JANTXV product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
September 3, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7465 AND 2N7466, JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each...
MIL-PRF-19500/676
June 7, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7465 AND 2N7466, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
May 9, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
December 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
December 11, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
December 22, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
September 4, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
August 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR
A description is not available for this item.
October 30, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR
A description is not available for this item.
September 14, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR
A description is not available for this item.
February 20, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
February 18, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects), power transistor. Two levels of product...