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DOD - SMD 5962-03236

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 2 April 2008
Status: inactive
Page Count: 28
scope:

This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 19, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
October 12, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q), and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-03236
April 2, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
November 8, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
October 20, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
September 12, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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