DLA - SMD-5962-03236 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 20 October 2003 |
| Status: | inactive |
| Page Count: | 27 |
Document History
January 19, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
October 12, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q), and space application (device class V). A choice of case outlines and lead finishes are...
April 2, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and for appropriate satellite and similar...
November 8, 2004
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-03236 REV A
October 20, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.
September 12, 2003
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 32-BIT (4M), RADIATION-HARDENED SRAM, MONOLITHIC SILICON
A description is not available for this item.