NPFC - MIL-PRF-19500/597
Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334
inactive
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| Organization: | NPFC |
| Publication Date: | 27 June 2008 |
| Status: | inactive |
| Page Count: | 1 |
scope:
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Two levels of product assurance are provided for each unencapsulated device type die.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
November 27, 2023
TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current...
October 17, 2018
TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 25, 2015
TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
May 17, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
January 27, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
August 18, 2010
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated...
MIL-PRF-19500/597
June 27, 2008
Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated...
September 8, 2003
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, AND JANHCA2N7334
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated...
August 16, 2001
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON TYPE 2N7334 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
January 20, 1999
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON TYPE 2N7334 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 3, 1998
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad Nchannel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
April 5, 1995
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, transistor intended for use in high density power switching applications. Four levels of product...
September 14, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
January 8, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
July 29, 1992
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
November 4, 1991
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPE 2N7334, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...