DLA - MIL-S-19500/597B
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 5 April 1995 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Two levels of product assurance for die.
See figure 1 (MO-036AB, dual-inline package), figure 2, and 6.3 for JANHC and JANKC die dimensions.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
November 27, 2023
TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current...
October 17, 2018
TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 25, 2015
TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
May 17, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
January 27, 2014
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR)....
August 18, 2010
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated...
June 27, 2008
Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated...
September 8, 2003
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, AND JANHCA2N7334
This specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each hermetic encapsulated...
August 16, 2001
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON TYPE 2N7334 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
January 20, 1999
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON TYPE 2N7334 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 3, 1998
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for quad Nchannel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type...
MIL-S-19500/597B
April 5, 1995
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, transistor intended for use in high density power switching applications. Four levels of product...
September 14, 1994
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
January 8, 1993
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
July 29, 1992
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS N-CHANNEL, SILICON, TYPE 2N7334, JANTX, JANTXV, JANS, AND JANC
A description is not available for this item.
November 4, 1991
SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPE 2N7334, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for quad N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...