scope:

This standard establishes uniform methods for testing semiconductor devices, including basic environmental tests to determine resistance to deleterious effects of natural elements and conditions surrounding military operations, and physical and electrical tests. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods described herein have been prepared to serve several purposes:

a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field, and to obtain reproducibility of the results of tests. The tests described herein are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location, since it is known that the only true test for operation in a specific location is an actual service test at that point.

b. To describe in one standard all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications, so that these methods may be kept uniform and thus result in conservation of equipment, manhours, and testing facilities. In achieving this objective, it is necessary to make each of the general tests adaptable to a broad range of devices.

c. The test methods described herein for environmental, physical, and electrical testing of devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing.

The test methods are designated by numbers assigned in accordance with the following system:

The tests are divided into five classes. Test methods numbered 1001 to 1999 inclusive, cover environmental tests; those numbered 2001 to 2999 inclusive cover mechanical-characteristics tests. Electrical- characteristics tests are covered in two groups; 3001 to 3999 inclusive covers tests for transistors and 4001 to 4999 covers tests for diodes. Test methods numbered 5000 to 5999 inclusive are for high reliability space applications.

Revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, 4001.1 is the first revision of test method 4001.

When applicable, test methods contained herein shall be referenced in the individual specification by specifying this standard, the method number, and the details required in the summary paragraph of the applicable method. To avoid the necessity for changing specifications that refer to this standard, the revision number should not be used when referencing test methods. For example, use 4001, not 4001.1.

The following documents form a part of this standard to the extent specified herein:

SPECIFICATIONS MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-45662 - Calibration Systems Requirements. DOD-STD-1686 - Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices).

(Copies of specifications, standards, handbooks, drawings, and publications required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting officer.)

DRAWINGS - JAN 103-JAN - Filter for Testing Crystal Rectifier 1N23, 1N23A and 1N23B. 107-JAN - Mixer for Testing Crystal Rectifier Type 1N26. 118-JAN - Figure of Merit Holder for Crystal Rectifier 1N31. 124-JAN - Mixer and Coupling Circuit for Crystal Rectifiers 1N21B. 152-JAN - SA Band Crystal Detector Test Holder. 174-JAN - Mixer for Electron Tube Type 1N53. 231-JAN - Burn Out Testing Equipment for 1N25 Crystals Schematic Diagram. 233-JAN - Loss Measuring Equipment for 1N25 Crystals Schematic Diagram. 234-JAN - Loss Measuring Equipment for 1N25 Crystals Bill of Material. 236-JAN - Burn Out Testing Equipment for 1N25 Crystals Bill of Materials. 256-JAN - Reverse Pulse Recovery Time Test and Calibration Procedure. 266-JAN - Mixer Holder, Narrow, Band, for 1N263. DRAWINGS - DESC ASSEMBLY D64100 - Diode Test Holder, 3,060 MHz (S-Band). C64169 - Sliding Load (S-Band) Used with D64100. C65017 - Assembly, Tri-polar Diode Holder. D65019 - Diode Test Holder, 9,375 GHz (X-Band). C65042 - Sliding Load (X-Band) Used with D65019. D65064 - Diode Test Holder, 16 GHz (Ku-Band). C65101 - Sliding Load (Ku-Band) Used with D65064. C66053 - Mixer Holder, Narrow Band, for 1N1838. B66054 - Adaptor For Burn-Out Test. C66058 - Burn-Out Tester For Microwave Diodes.

(Copies of drawings may be obtained from the Defense Electronics Supply Center, Directorate of Engineering Standardization (DESC-ES), 1507 Wilmington Pike, Dayton, Ohio 45444. When requesting copies of these drawings, both the identifying symbol number and title should be stipulated.)

The following documents form a part of this standard to the extent specified herein. Unless otherwise indicated, the issue in effect on date of invitation for bid shall apply.

HANDBOOKS MILITARY DOD-HDBK-263 - Electrostatic Discharge Control Handbook for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices).

Standard Handbook for Electrical Engineers.

(Application for copies should be addressed to the McGraw-Hill Book Company, Inc., New York, N.Y.)

NBS Handbook 59 - Permissible Dose From External Sources of Ionizing Radiation, Recommendations of National Committee on Radiation Protection. NBS Handbook 73 - Protection Against Radiations from Sealed Gamma Sources. NBS Handbook 76 - Medical X-Ray Protection Up to 3 Million Volts.

(Application for copies should be addressed to the Superintendent of Documents, Washington, DC 20402.)