DOD - SMD 5962-96822
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, QUADRUPLE 2 INPUT POSITIVENAND GATE, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 21 January 2009 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
October 5, 2021
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, QUADRUPLE 2 INPUT POSITIVE-NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
February 26, 2015
MICROCIRCUIT, DIGITAL, ADVANCED HIGHSPEED CMOS, QUADRUPLE 2 INPUT POSITIVENAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-96822
January 21, 2009
MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, QUADRUPLE 2 INPUT POSITIVENAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 1, 1996
MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
A description is not available for this item.