DOD - SMD 5962-07210
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 16 February 2007 |
| Status: | inactive |
| Page Count: | 21 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
May 11, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION- HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
September 1, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
SMD 5962-07210
February 16, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 8-BIT (4M), RADIATIONHARDENED, LOW VOLTAGE SRAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...