NPFC - MIL-PRF-19500/706
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
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| Organization: | NPFC |
| Publication Date: | 24 February 2010 |
| Status: | inactive |
| Page Count: | 1 |
scope:
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
May 14, 2020
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, 2N7499T2, AND 2N7561T2 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with...
February 6, 2015
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, 2N7499T2, AND 2N7561T2 JANTXVR AND JANSR
This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche...
August 23, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2, JANTXVR AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/706
February 24, 2010
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
January 21, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2, JANTXVR AND JANSR
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
February 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7497T2, 2N7498T2 AND 2N7499T2 JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...