NPFC - MIL-PRF-19500/749
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
inactive
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| Organization: | NPFC |
| Publication Date: | 21 May 2010 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
November 13, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
Scope.
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
February 19, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
MIL-PRF-19500/749
May 21, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
July 16, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
June 5, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...