ISO 12406

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon

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Organization: ISO
Publication Date: 15 November 2010
Status: active
Page Count: 20
ICS Code (Chemical analysis): 71.040.40
scope:

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

Document History

ISO 12406
November 15, 2010
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus...

References

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