ISO 12406
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
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| Organization: | ISO |
| Publication Date: | 15 November 2010 |
| Status: | active |
| Page Count: | 20 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
Document History
ISO 12406
November 15, 2010
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus...