ISO 14237
Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials
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| Organization: | ISO |
| Publication Date: | 15 July 2010 |
| Status: | active |
| Page Count: | 26 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 × 1016 atoms/cm3 to 1 × 1020 atoms/cm3.
Document History
ISO 14237
July 15, 2010
Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials...
February 1, 2000
Surface Chemical Analysis - Secondary-Ion Mass Spectrometry - Determination of Boron Atomic Concentration in Silicon Using Uniformly Doped Materials
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