ISO 17560

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

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Organization: ISO
Publication Date: 15 September 2014
Status: active
Page Count: 18
ICS Code (Chemical analysis): 71.040.40
scope:

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, polycrystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Document History

ISO 17560
September 15, 2014
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus...
July 15, 2002
Surface Chemical Analysis - Secondary-ion Mass Spectrometry - Method for Depth Profiling of Boron in Silicon
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References

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