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DSF/FPREN IEC 63011-3

Integrated circuits – Three dimensional integrated circuits – Part 3: Model and measurement conditions of through-silicon via

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Organization: DS
Status: active
Page Count: 16
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This International Standard / This part of IEC 63011-3 specifies a reference model of Through Silicon Via (TSV) electrical characteristics required for an interface design in Three Dimensional Integrated Circuit (3DIC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3DIC. 3DIC specification covered by this document are; Application: digital consumer and mobile, Operating voltage: 0.1v - 5.0v, Operating frequency: less than 2.0GHz. This document does not describe the equipment for the measurement. Fig. 1 describes a typical case of multi-chip interconnect system discussed in this document. Figure 1 - Reference of a multi-chip interconnect system Power devices, RF devices and MEMS are not included with this scope of 3DIC which is described above for standardizing. These devices need to be discussed separately in another scope because some different models will be needed for them.

Document History

DSF/FPREN IEC 63011-3
Integrated circuits – Three dimensional integrated circuits – Part 3: Model and measurement conditions of through-silicon via
This International Standard / This part of IEC 63011-3 specifies a reference model of Through Silicon Via (TSV) electrical characteristics required for an interface design in Three Dimensional...

References

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