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DIN EN 62047-18

Semiconductor devices - Micro-electromechanical devices - Part 18: Bending test methods of thin film materials (IEC 47F/76/CD:2011)

inactive, Most Current
Organization: DIN
Publication Date: 1 June 2011
Status: inactive
Page Count: 20
ICS Code (Electromechanical components in general): 31.220.01
ICS Code (Semiconductor devices in general): 31.080.01
scope:

This international standard specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0.1 μm and 10 μm. Thin films are used as main structural materials for MEMS and micromachines.

The main structural materials for MEMS, micromachines, etc., have special features, such as a few microns, material fabrication by deposition, and test piece fabrication by means of nonmechanical machining, including photolithography. This International Standard specifies the bend testing for micro-sized smooth specimens, which enables a guarantee of accuracy corresponding to the special features..

Document History

DIN EN 62047-18
June 1, 2011
Semiconductor devices - Micro-electromechanical devices - Part 18: Bending test methods of thin film materials (IEC 47F/76/CD:2011)
This international standard specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0.1 μm and 10 μm. Thin films are used...

References

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