DOD - SMD 5962-11201
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4M X 18-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
Organization: | DOD |
Publication Date: | 1 October 2019 |
Status: | active |
Page Count: | 31 |
scope:
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History



