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DOD - SMD 5962-11202

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 36-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 1 October 2019
Status: active
Page Count: 31
scope:

Scope.

This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-11202
October 1, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 36-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes...
April 22, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 36-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are...
September 8, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 36-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are...
September 13, 2012
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 36-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are...

References

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