NPFC - MIL-PRF-19500/652
TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
active, Most Current
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| Organization: | NPFC |
| Publication Date: | 21 July 2020 |
| Status: | active |
| Page Count: | 17 |
scope:
Scope.
This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, power MOSFET transistor, with avalanche energy maximum ratings (EAS ) and maximum avalanche current (IAS). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/652
July 21, 2020
TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, power MOSFET transistor, with avalanche energy maximum ratings (EAS ) and maximum...
November 5, 2018
Semiconductor Device, Transistor, High Voltage, Field Effect, N-Channel, Silicon, Type 2N7387 and 2N7387U1, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
December 6, 2013
SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a high voltage N-channel, enhancementmode, power MOSFET transistor, with avalanche energy maximum ratings (EAS ) and maximum avalanche...
September 21, 2008
SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a high voltage N-channel, enhancementmode, power MOSFET transistor, with avalanche energy maximum ratings (EAS ) and maximum avalanche...
September 14, 2007
SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, power MOSFET transistor, with avalanche energy maximum ratings (EAS) and maximum avalanche...
May 4, 2001
SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, power MOSFET transistor, with avalanche energy maximum ratings (EAS) and maximum avalanche...