DLA - MIL-PRF-19500/550D (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, ENCAPSULATED (STUD AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
active, Most Current
| Organization: | DLA |
| Publication Date: | 10 May 2021 |
| Status: | active |
| Page Count: | 19 |
scope:
This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/550D (1)
May 10, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, ENCAPSULATED (STUD AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Four levels of product assurance are provided for each...
December 18, 2015
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, ENCAPSULATED (STUD AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each...
October 18, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT, TYPES 1N6304, 1N6305, 1N6306, AND R TYPES, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each...
May 21, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 AND R TYPES JAN, JANTX, JANTXV, JANHC, AND JANKC
A description is not available for this item.
October 20, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 AND R TYPES JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the performance requirements for silicon, high efficiency fast recovery switching power rectifier diodes. Three levels of product assurance are provided for each...
June 30, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 AND R TYPES JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification covers the detail requirements for silicon, high efficiency fast recovery switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated...
November 3, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6305, 1N6306 AND -R TYPES JANTX AND JANTXV
A description is not available for this item.
June 1, 1982
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 and -R TYPES JAN, JANTX, JANTXV
A description is not available for this item.
December 21, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 and -R types JAN, JANTX, JANTXV
This specification covers the detail requirements for silicon high efficiency fast recovery switching power rectifiers. Three levels of product assurance are provided for each device type as...