DLA - MIL-S-19500/550A
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 AND R TYPES JAN, JANTX, JANTXV, JANHC, AND JANKC
| Organization: | DLA |
| Publication Date: | 30 June 1994 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the detail requirements for silicon, high efficiency fast recovery switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500, and two levels of product assurance for each unencapsulated device type die.
See figure 1 (DO-203AB) and figure 2 for JANHC and JANKC (die) dimensions.
TC = +25°C, unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defence Electronic Supply Center, DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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