NPFC - MIL-PRF-19500/550
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 AND R TYPES JAN, JANTX, JANTXV, JANHC, AND JANKC
| Organization: | NPFC |
| Publication Date: | 20 October 1998 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the performance requirements for silicon, high efficiency fast recovery switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
See figure 1 (DO-203AB) formerly DO-5 and figures 2, 3, 4 and 5 for JANHC and JANKC (die) dimensions.
Unless otherwise specified, TC = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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