DLA - MIL-PRF-19500/712F (1)
TRANSISTOR, FIELD EFFECT, P-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7545, 2N7546, 2N7547, AND 2N7548, JANTXVR, F, G, H AND JANSR, F, G, H
active, Most Current
| Organization: | DLA |
| Publication Date: | 9 July 2021 |
| Status: | active |
| Page Count: | 27 |
scope:
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/712F (1)
July 9, 2021
TRANSISTOR, FIELD EFFECT, P-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7545, 2N7546, 2N7547, AND 2N7548, JANTXVR, F, G, H AND JANSR, F, G, H
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
October 23, 2017
TRANSISTOR, FIELD EFFECT, P-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7545, 2N7546, 2N7547, AND 2N7548, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
July 18, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 8, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
October 27, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
October 25, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
August 25, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 25, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H
This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...